Traps at the bonded interface in silicon-on-insulator structures

Applied Physics Letters

Volumn 79, Issue 27, 2001, Pages 4539-4540

  Antonova, I V ^a   Naumova, O V ^a   Nikolaev, D V ^a   Popov, V P ^a   Stano, J ^b   Skuratov, V A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035981071     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1428412     Document Type: Review

References (6)

1. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
2. V. P. Popov, I. V. Antonova, V. F. Stas, L. V. Mironova, E. P. Neustroev, A. K. Gutakovskii, A. A. Franzusov, G. N. Feofanov, in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, edited by P. L. F. Hemment (Kluwer, Dordrecht, 2000), pp. 47-54.
3. I. V. Antonova, O. V. Naumova, J. Stano, D. V. Nikolaev, V. P. Popov, and V. A. Skuratov, Proceedings of Intern. Conf. Iion Implantation Technology, Austria 273 (2000).
4. T. Katsube, K. Kakimoto, and T. Ikoma, J. Appl. Phys. 52, 3504 (1981).
5. A. A. Lebedev and V. Ekke, Semiconductors 19, 1087 (1985).
6. V. P. Popov, I. V. Antonova, V. F. Stas, L. V. Mironova, A. K. Gutakovskii, E. V. Spesivtsev, A. A. Franzusov, A. S. Mardegov, and G. Feofanov, Mater. Sci. Eng., B 73, 82 (2000).