A new tungsten gate metal oxide semiconductor capacitor using a chemical vapor deposition process

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 214-217

  Yeh, Wen Kuan ^a   Shiau, Yeu Cherng ^a   Chen, Mao Chieh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); MOS DEVICES; REDUCTION; SILICON; SPUTTER DEPOSITION; THIN FILMS; TUNGSTEN;

INTERFACE STATE DENSITY; SACRIFICIAL LAYER;

CAPACITORS;

EID: 0030784203     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837387     Document Type: Article

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