Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd2O3) incorporated HfO2 n-MOSFETs

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 219-220

  Rhee, Se Jong ^a   Kim, Hyoung Sub ^a   Kang, Chang Yong ^a   Choi, Chang Hwan ^a   Akbar, M S ^a   Zhang, Manhong ^a   Lee, Tackwhi ^a   Ok, Injo ^a   Zhu, Feng ^a   Krishnan, Siddarth A ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GADOLINIUM COMPOUNDS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS;

DIELECTRIC STRUCTURES; MULTI-METAL DIELECTRICS; SCALING;

MOSFET DEVICES;

EID: 33751350653     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553128     Document Type: Conference Paper

References (3)

1. S. J. Rhee, et al., IEDM Tech. Dig. p. (2004)
2. J. Robertson J. Vac. Sci. Tech. B 18, p. 1875 (2000)
3. K. J. Hubbard, D. G. Schlom, J. Mater, Res. 11, p.2757 (1996)