Characteristics of high-operating-temperature InAs/GaAs quantum-dot infrared detectors

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Pal, D ^a   Towe, E ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; DOPANTS; QUANTUM-DOT DENSITY;

BAND STRUCTURE; CARRIER CONCENTRATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

INFRARED DETECTORS;

EID: 33646140780     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193466     Document Type: Article

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