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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1159-1164

Deep level and conduction mechanism in low-temperature GaAs grown by molecular beam epitaxy

(3) Shiobara, Syunsuke a Hashizume, Tamotsu a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Deep level; Defect; DLTS; EL2; LT GaAs; Photocapacitance; Photoquenching

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; EPITAXIAL GROWTH; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PYROMETERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; THERMOCOUPLES;

GROWTH TEMPERATURE; LIQUID ENCAPSULATED CZOCHRALSKI; PHOTOCAPACITANCE MEASUREMENT; PHOTOLUMINESCENCE MEASUREMENT; PHOTOQUENCHING; POST GROWTH ANNEALING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030079776 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1159 Document Type: Article

Times cited : (20)

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