Temperature dependence of intersublevel absorption in InAs/GaAs self-assembled quantum dots

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4620-4622

  Bras, F ^a   Boucaud, P ^a   Sauvage, S ^a   Fishman, G ^a   Gerard J M ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION AMPLITUDE; BARRIER HEIGHTS; DENSITY OF STATE; ELECTRON PHONON COUPLINGS; FIRST EXCITED STATE; IN-PLANE; INAS/GAAS; INTERSUBLEVEL TRANSITIONS; LOW TEMPERATURES; N-DOPED; P-TYPE; RED SHIFT; ROOM TEMPERATURE; SELF ASSEMBLED QUANTUM DOTS; TEMPERATURE DEPENDENCE; WETTING LAYER;

EXCITED STATES; GROUND STATE; PHONONS; SEMICONDUCTOR QUANTUM DOTS; THERMIONIC EMISSION; THREE DIMENSIONAL;

TEMPERATURE DISTRIBUTION;

EID: 79956007649     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1487446     Document Type: Article

References (13)

1. H. Drexler, D. Leonard, W. Hansen, J. P. Kotthaus, and P. M. Petroff, Phys. Rev. Lett. 73, 2252 (1994). prl PRLTAO 0031-9007
2. S. Sauvage, P. Boucaud, F. H. Julien, J.-M. Gérard, and J.-Y. Marzin, J. Appl. Phys. 82, 3396 (1997). jap JAPIAU 0021-8979
3. S. Sauvage, P. Boucaud, F. H. Julien, J.-M. Gérard, and V. Thierry-Mieg, Appl. Phys. Lett. 71, 2785 (1997). apl APPLAB 0003-6951
4. Y. Nabetani, T. Ishikawa, S. Noda, and A. Sakaki, J. Appl. Phys. 76, 347 (1994). jap JAPIAU 0021-8979
5. For simplicity, the labelling of the confined states as s-p- or d-type states refers to electronic states in a single particle picture and does not directly apply to coherent coupled states like polarons. Note that the intersublevel resonance energies and the dipole matrix elements for these dots are not expected to be significantly modified by the strong electron-phonon coupling.
6. Optical transitions between p and d states are also in-plane polarized with a dipolar matrix element equivalent to that of s-p transitions.
7. S. Sauvage, P. Boucaud, J.-M. Gérard, and V. Thierry-Mieg, Phys. Rev. B 58, 10562 (1998). prb PRBMDO 0163-1829
8. M. O. Manasreh, F. Szmulowicz, D. W. Fischer, K. R. Evans, and C. E. Sputz, Appl. Phys. Lett. 57, 1790 (1990). apl APPLAB 0003-6951
9. G. Gumbs, D. Huang, and J. P. Loehr, Phys. Rev. B 51, 4321 (1995). prb PRBMDO 0163-1829
10. P. Von Allmen, M. Berz, G. Petrocelli, F.-K. Reinhart, and G. Harbeke, Semicond. Sci. Technol. 3, 1211 (1988). sst SSTEET 0268-1242
11. S. Hameau, Y. Guldner, O. Verzelen, R. Ferreira, G. Bastard, J. Zeman, A. Lemaitre, and J. M. Gérard, Phys. Rev. Lett. 83, 4152 (1999). prl PRLTAO 0031-9007
12. O. Verzelen, R. Ferreira, and G. Bastard, Phys. Rev. B 62, R4809 (2000). prb PRBMDO 0163-1829
13. The calculation is performed for a fixed average barrier height to the 3D continuum of 180 meV. Integrating over the dot size distribution leads to a very similar result as reported in Fig. 3(b).