Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film

Thin Solid Films

Volumn 516, Issue 1, 2007, Pages 42-46

  Zhang, Ting ^a,b   Song, Zhitang ^a   Liu, Bo ^a   Feng, Gaoming ^a,b   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Chalcogenide random access memory; Data retention; Ge1Sb2Te4; Hall effect; Phase change

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; HALL EFFECT; PHASE CHANGE MATERIALS; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CHALCOGENIDE RANDOM ACCESS MEMORY; DATA RETENTION; STRUCTURAL TRANSFORMATION;

GERMANIUM COMPOUNDS;

EID: 34748867074     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.047     Document Type: Article

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