Ge1Sb2Te4 based chalcogenide random access memory array fabricated by 0.18-μm CMOS technology

Chinese Physics Letters

Volumn 24, Issue 3, 2007, Pages 790-792

  Zhang, Ting ^a,b   Song, Zhi Tang ^a   Feng, Gao Ming ^a,b   Liu, Bo ^a   Wu, Liang Cai ^a   Feng, Song Lin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; CHALCOGENIDES; CMOS INTEGRATED CIRCUITS; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; PHASE CHANGE MEMORY; TELLURIUM COMPOUNDS;

0.18-ΜM CMOS; CHALCOGENIDE RANDOM ACCESS MEMORY; CMOS TECHNOLOGY; ELECTRICAL PERFORMANCE; MEMORY ARRAY; PROGRAMMING CURRENTS; PULSEWIDTHS; PULSWIDTHS; STRUCTURE SIZES; THIN-FILMS;

FABRICATION;

EID: 34247211691     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/3/056     Document Type: Article

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