Structure and sheet resistance of boron-implanted Ge2Sb 2Te5 phase change film

Materials Science and Engineering: B

Volumn 119, Issue 2, 2005, Pages 125-130

  Liu, Bo ^a   Song, Zhitang ^a   Feng, Songlin ^a   Chen, Bomy ^b  

^a Shanghai Inst of Microsystem and Information System   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

B implantation; Ge2Sb2Te5; Sheet resistance; Structure

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BORON; CRYSTALLIZATION; GERMANIUM COMPOUNDS; GRAIN BOUNDARIES; ION IMPLANTATION; MICROSTRUCTURE; PHASE SEPARATION; PHASE TRANSITIONS; SURFACE TOPOGRAPHY; X RAY DIFFRACTION ANALYSIS;

BORON IMPLANTATION; GE2SB2TE5 FILMS; SHEET RESISTANCE; TEMPERATURE STABILITY;

SEMICONDUCTING FILMS;

EID: 17844361907     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.01.017     Document Type: Article

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