Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Superlattices and Microstructures

Volumn 28, Issue 1, 2000, Pages 29-33

  Dias, I F L ^a   Duarte, J L ^a   Laureto, E ^a   Gelamo, R V ^a   Menezes, E A ^c   Harmand, J C ^b  

^a STATE UNIVERSITY OF LONDRINA   (Brazil)

^b ORANGE LABS   (France)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BRAGG MIRRORS; DIGITAL ALLOYS; OPTICAL REFLECTIVITY;

MIRRORS;

EID: 0034224892     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0847     Document Type: Article

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