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Volumn 1, Issue , 1996, Pages 207-208
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Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
DIFFUSION IN SOLIDS;
ETCHING;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM WELLS;
SILICA;
ZINC;
DISTRIBUTED BRAGG REFLECTORS;
LASER THRESHOLD CURRENTS;
VERTICAL CAVITY LASERS;
SEMICONDUCTOR LASERS;
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EID: 0030381629
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/leos.1996.565200 Document Type: Conference Paper |
Times cited : (5)
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References (3)
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