Impact of NBTI and HCI on PMOSFET threshold voltage drift

Microelectronics Reliability

Volumn 45, Issue 1, 2005, Pages 13-18

  Chaparala, Prasad ^a   Brisbin, Douglas ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; EXTRAPOLATION; HOT CARRIERS; PARAMETER ESTIMATION; STRESS ANALYSIS; THRESHOLD VOLTAGE;

CHANNEL LENGTH; DAMAGE RECOVERY; HOT-CARRIER INJECTION (HCI); VOLTAGE DRIFT;

MOSFET DEVICES;

EID: 10044256253     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.03.016     Document Type: Article

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