NBT-induced Hot Carrier (HC) effect: Positive feedback mechanism in p-MOSFET's degradation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 79-85

  Aono, Hideki ^a   Murakami, E ^a   Okuyama, K ^a   Makabe, K ^a   Kuroda, K ^a   Watanabe, K ^a   Ozaki, H ^a   Yanagisawa, K ^a   Kubota, K ^a   Ohji, Y ^a  

^a HITACHI LTD   (Japan)

Author keywords

AC stress; Hole trap; Hot carrier; Interface state; Negative Bias Temperature; p MOSFET; Positive fixed oxide charge

Indexed keywords

DEGRADATION; ELECTRIC FIELDS; FEEDBACK; HOLE TRAPS; MOSFET DEVICES; STRESS ANALYSIS; THERMAL EFFECTS;

NEGATIVE BIAS TEMPERATURE;

HOT CARRIERS;

EID: 0036084989     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)