Dynamic NBTI lifetime model for inverter-like waveform

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1115-1118

  Tan, Shyue Seng ^a   Chen, Tu Pei ^a   Chan, Lap ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA ACQUISITION; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; MATHEMATICAL MODELS; PASSIVATION; STATIC RANDOM ACCESS STORAGE; STRESS ANALYSIS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

GATE OXIDE THICKNESS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); STATIC STRESS; THERMAL OXIDATIONS;

MOSFET DEVICES;

EID: 20344374392     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.01.009     Document Type: Article

References (11)

1. Kimizuka N, Yamamoto T, Mogami T, Yamaguchi K, Imai K, Horiuchi T. The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling. In: Symp on VLSI Tech Digest, 1999. p. 73-4.
2. Kimizuka N, Yamaguchi K, Imai K, Iizuka T, Liu CT, Keller RC, et al. NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation. In: Symp on VLSI Tech Digest, 2000. p. 92-3.
3. S.S. Tan, T.P. Chen, C.H. Ang, and L. Chan Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition Appl Phys Lett 82 2003 269 271
4. S.S. Tan, T.P. Chen, J.M. Soon, K.P. Loh, C.H. Ang, and L. Chan Nitrogen-enhanced negative bias temperature instability: an insight by experiments and first-principles calculations Appl Phys Lett 82 2003 1881 1883
5. th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs Jpn J Appl Phys 2002 2423 2425
6. Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi NBTI mechanism in ultra-thin gate dielectric: Nitrogen-originated mechanism in SiON IEDM Tech Dig 2002 509 513
7. G. Chen, M.F. Li, C.H. Ang, J.Z. Zhang, and D.L. Kwang Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling IEEE Electron Device Lett 23 2002 734 736
8. Abadder W, Ellis W. Behavior of NBTI under AC dynamic circuit conditions. In: Proc Int Reliability Physics Symp, 2003. p. 17-22.
9. Tan SS, Chen TP, Ang CH, Chan L, in press.
10. Y. Fong, I.C. Chen, S. Holland, J. Lee, and C. Hu Dynamic stressing of thin oxides IEDM Tech Dig 1995 863 866
11. 2 films under dynamic stress. In: Proc Int Reliability Physics Symp, 1996. p. 61-6.