Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching

Nanotechnology

Volumn 18, Issue 33, 2007, Pages

  Chiu, C H ^a   Lo, M H ^a   Lai, C F ^a   Lu, T C ^a   Huang, H W ^a,b   Chang, Y A ^a   Hsueh, T H ^a   Yu, C C ^a   Kuo, H C ^a   Wang, S C ^a   Lin, C F ^c   Kuo, Y K ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TrueLight Corp Taiwan   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^d NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE TESTING; MICROFABRICATION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; PLASMA ETCHING;

EMISSION SURFACE AREAS; GREEN EMISSION; PIEZOELECTRIC FIELD;

NANORODS;

NANOMATERIAL; NANOROD;

ARTICLE; CHEMICAL STRUCTURE; NANOCHEMISTRY; OPTICAL ROTATION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; PRIORITY JOURNAL;

EID: 34548682602     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/33/335706     Document Type: Article

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