SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Computational Electronics

Volumn 3, Issue 3-4, 2004, Pages 277-280

3D electrostatics of carbon nanotube field-effect transistors

(3) Neophytou, Neophytos a Lundstrom, Mark a Guo, Jing b

a PURDUE UNIVERSITY (United States)

b UNIVERSITY OF FLORIDA (United States)

Author keywords

Carbon nanotubes; Flat band; High k dielectric; Method of moments; Schottky barrier

Indexed keywords

EID: 24944500592 PISSN: 15698025 EISSN: None Source Type: Journal
DOI: 10.1007/s10825-004-7061-x Document Type: Article

Times cited : (4)

References (9)

1
- 0042991275
- "Ballistic carbon nanotube field-effect transistors"
- 10.1038/nature01797
- A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors" Nature, 424, 654, (2003). 10.1038/nature01797
- (2003) Nature , vol.424 , pp. 654
- Javey, A.¹ Guo, J.² Wang, Q.³ Lundstrom, M.⁴ Dai, H.⁵

2
- 0036974829
- "High dielectrics for advanced carbon nanotube transistors and logic"
- 10.1038/nmat769
- A. Javey et al., "High dielectrics for advanced carbon nanotube transistors and logic" Nature Materials, 1, 241-246 (2002). 10.1038/ nmat769
- (2002) Nature Materials , vol.1 , pp. 241-246
- Javey, A.¹

3
- 2442509519
- "Electrostatics of nanowire transistors"
- 10.1109/TNANO.2003.820518
- J. Guo et al., "Electrostatics of nanowire transistors" IEEE Trans. Nanotechnol, 2 (4), 329 (2003). 10.1109/TNANO.2003.820518
- (2003) IEEE Trans. Nanotechnol. , vol.2 , Issue.4 , pp. 329
- Guo, J.¹

4
- 2442562014
- "Electrostatics of coaxial schottky-barrier nanotube field-effect transistors"
- 10.1109/TNANO.2003.817228
- D.L. John, L. Castro, J. Clifford, and D. Pulfrey, "Electrostatics of coaxial schottky-barrier nanotube field-effect transistors" IEEE Trans. Nanotechnol., 2, 175 (2003). 10.1109/TNANO.2003.817228
- (2003) IEEE Trans. Nanotechnol. , vol.2 , pp. 175
- John, D.L.¹ Castro, L.² Clifford, J.³ Pulfrey, D.⁴

5
- 2942707989
- "Electrostatics of partially gated carbon nanotube FETs"
- 10.1109/TNANO.2004.828539
- J.P. Clifford, D.L. John, L, C. Castro, and D.P. Pulfrey, "Electrostatics of partially gated carbon nanotube FETs" IEEE Trans. Nanotechnol, 3 (2), 281 (2004). 10.1109/TNANO.2004.828539
- (2004) IEEE Trans. Nanotechnol. , vol.3 , Issue.2 , pp. 281
- Clifford, J.P.¹ John, D.L.² Castro, L.C.³ Pulfrey, D.P.⁴

6
- 0041445527
- "Novel length scales in nanotube devices"
- 10.1103/PhysRevLett.83.5174
- F. Leonard and J. Tersoff, "Novel length scales in nanotube devices" Phys. Rev. Lett., 83, 5174 (1999). 10.1103/ PhysRevLett.83.5174
- (1999) Phys. Rev. Lett. , vol.83 , pp. 5174
- Leonard, F.¹ Tersoff, J.²

7
- 0032187666
- "Generalized scale length for two-dimensional effects in MOSFETs"
- D.J. Frank, Taur Yuan, and P. Wong Hon-Sum, "Generalized scale length for two-dimensional effects in MOSFETs," IEEE EDL, 19, 385 (1998).
- (1998) IEEE EDL , vol.19 , pp. 385
- Frank, D.J.¹ Taur, Y.² Wong Hon-Sum, P.³

8
- 0003904786
- Wiley New York
- S. Ramo J.R. Whinnery and T.V. Duzer 1994 Field and Waves in Communication Electronics Wiley New York
- (1994) Field and Waves in Communication Electronics
- Ramo, S.¹ Whinnery, J.R.² Duzer, T.V.³

9
- 0004179874
- Wiley New York
- J.D. Jackson 1975 Classical Electrodynamics Wiley New York
- (1975) Classical Electrodynamics
- Jackson, J.D.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.