Atomic-scale studies on the growth of palladium and titanium on GaN(0 0 0 1)

Surface Science

Volumn 601, Issue 18, 2007, Pages 4438-4443

  Norenberg C ^a,b   Castell, M R ^b  

^a SWANSEA UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Alloys; Epitaxy; Gallium nitride; Metal semiconductor interfaces; Nanostructures; Palladium; Scanning tunnelling microscopy; Titanium

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; TITANIUM; TITANIUM ALLOYS;

ATOMIC SCALES; METAL SEMICONDUCTOR INTERFACES;

PALLADIUM;

EID: 34548645377     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.144     Document Type: Article

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