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Volumn 600, Issue 4, 2006, Pages 873-879

Resonant photoemission study of Ti interaction with GaN surface

(10) Kowalik, I A a Kowalski, B J a Kaczor, P a Orlowski, B A a Lusakowska, E a Johnson, R L b Houssiau, L c Brison, J c Grzegory, I d Porowski, S d

a INSTITUTE OF PHYSICS (Poland)

b UNIVERSITY OF HAMBURG (Germany)

c UNIVERSITY OF NAMUR (Belgium)

d INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

Gallium nitride; Interface states; Metal semiconductor interface; Synchrotron radiation photoelectron spectroscopy; Titanium

Indexed keywords

ANNEALING; GALLIUM NITRIDE; INTERFACES (MATERIALS); TITANIUM NITRIDE;

INTERFACE STATES; METAL-SEMICONDUCTOR INTERFACE;

TITANIUM;

EID: 32544435961 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.12.016 Document Type: Article

Times cited : (3)

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