Effect of annealing temperature on leakage current characteristics of Bi3.25 La0.75 Ti3 O12 thin films prepared by sol-gel method

Integrated Ferroelectrics

Volumn 79, Issue 1, 2006, Pages 97-103

  Yu, Jun ^a   Dong Yun, Guo ^a   Yun Bo, Wang ^a   Jun Xiong, Gao ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Bi3.25 La0.75 Ti3 O12; Ferroelectric thin film; Leakage current; Sol Gel method

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; COERCIVE FORCE; LEAKAGE CURRENTS; PEROVSKITE; SOL-GELS;

BI3.25 LA0.75 TI3 O12; COERCIVE FIELD; ELECTRICAL TRANSPORT; SOL-GEL METHOD;

FERROELECTRIC THIN FILMS;

EID: 33745761759     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600657575     Document Type: Article

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