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Volumn 37, Issue 6, 2004, Pages 832-835
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Electrical properties of Bi3.25La0.75Ti 3O12/LaAlO3/Si structures for ferroelectric field effect transistor applications
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL SOLUTION DEPOSITION;
POLING CHARGES;
BISMUTH COMPOUNDS;
DIFFUSION;
FIELD EFFECT TRANSISTORS;
HYSTERESIS;
INTERFACES (MATERIALS);
POLARIZATION;
PULSED LASER DEPOSITION;
SILICON;
SUBSTRATES;
FERROELECTRIC THIN FILMS;
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EID: 1842424611
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/37/6/004 Document Type: Article |
Times cited : (4)
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References (17)
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