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Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 925-930

Selective growth of CdTe on Si(211): First-principle calculations

(4) Huang, Y a Chen, X S a Duan, H a Lu, W a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

As passivation; CdTe; Density of states (DOS); First principle; Selective growth; Si(211)

Indexed keywords

AS-PASSIVATION; DENSITY OF STATES (DOS); FIRST-PRINCIPLE CALCULATIONS; SELECTIVE GROWTH;

COMPUTATIONAL METHODS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE STRUCTURE;

EPITAXIAL GROWTH;

EID: 34548228519 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-007-0134-4 Document Type: Conference Paper

Times cited : (6)

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