The structure of the Si (211) surface

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1449-1454

  Fulk, C ^a   Sivananthan, S ^b   Zavitz, D ^b   Singh, R ^b   Trenary, M ^b   Chen, Y P ^c   Brill, G ^c   Dhar, N ^c  

^a EPIR TECHNOLOGIES INC   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

LEED; Reconstruction; Si (211); STM

Indexed keywords

ANNEALING TEMPERATURE; RECONSTRUCTION; SI (211); STM;

ANNEALING; CADMIUM; COSTS; INTEGRATED CIRCUIT LAYOUT; LOW ENERGY ELECTRON DIFFRACTION; MERCURY (METAL); MOLECULAR BEAM EPITAXY; PATTERN RECOGNITION; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; TELLURIUM; THERMAL EFFECTS; THERMAL EXPANSION;

SILICON;

EID: 33746255417     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0282-y     Document Type: Conference Paper

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