Electronic structure of Te- and As-covered Si(211)

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 4, 2003, Pages

  Sen, Prasenjit ^a   Batra, Inder ^a   Sivananthan, S ^a   Grein, H ^a   Dhar, Nibir ^b   Ciraci, S ^c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; SILICON; TELLURIUM;

ARTICLE; ATOMIC PARTICLE; CALCULATION; CHEMICAL BOND; CHEMICAL STRUCTURE; ELECTROCHEMICAL ANALYSIS; ENERGY; MOLECULAR STABILITY; SURFACE PROPERTY;

EID: 0042839612     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.045314     Document Type: Article

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