Influence of arsenic on the atomic structure of the Si(112) surface

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 839-845

  Zavitz, Daniel H ^a   Evstigneeva, Alexandra ^a   Singh, Rasdip ^a   Fulk, Chad ^a   Trenary, Michael ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Ag Si; Low energy electron diffraction (LEED); Scanning tunneling microscopy (STM); Si(112); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ARSENIC; DEPOSITION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; SURFACE CLEANING; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

AG/SI; SCANNING TUNNELING MICROSCOPY (STM); SI(112);

SILICON;

EID: 21644488811     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0029-1     Document Type: Conference Paper

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