Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 846-850

  Fulk, C ^a   Sporken, R ^a,b   Dumont, J ^b   Zavitz, D ^a   Trenary, M ^a   Gupta, B ^a   Brill, G ^c   Dinan, J ^d   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b UNIVERSITY OF NAMUR   (Belgium)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d US Army RDECOM CERDEC NVESD   (United States)

Author keywords

Arsenic (As); Low energy electron diffraction (LEED); Molecular beam epitaxy (MBE); Si(211); Si(311); Tellurium (Te); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ARSENIC; CADMIUM COMPOUNDS; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PASSIVATION; SURFACE TREATMENT; TELLURIUM; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

SI(211); SI(311); SILICON SUBSTRATE ORIENTATION; SILICON SURFACE;

SILICON;

EID: 21644446138     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0030-8     Document Type: Conference Paper

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