Growth of Te on As-exposed Si(211): Electronic structure calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 7, 2005, Pages

  Gupta, Bikash C ^a   Batra, Inder P ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CADMIUM; MERCURY; SILICON; TELLURIUM;

ABSORPTION; ARTICLE; ATOM; CALCULATION; DENSITY FUNCTIONAL THEORY; ELECTRON; STRUCTURE ANALYSIS; SURFACE PROPERTY;

EID: 15744401172     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.075328     Document Type: Article

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