Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1609-1614

  Meneghesso, G ^a,b   Podda, S ^c   Vanzi, M ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTROSTATICS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTROSTATIC DISCHARGES (ESD);

LIGHT EMITTING DIODES;

EID: 0035457080     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00201-3     Document Type: Article

References (6)

1. G. Meneghesso, A. Chini, A. Maschietto, E. Zanoni, P. Malberti, M. Ciappa: "Electrostatic Discharge and Electrical Overstress on GaN/InGaN Light Emitting Diodes" to be presented at EOS/ESD Symposium 2001, Oregon Convention Center, Portland, Oregon USA, September 9-13, 2001
2. S. Nakamura, "III-V Nitride-based LEDs and Lasers: Current Status and Future Opportunities", IEDM Tech. Dig. 2000, (San. Francisco, Dec. 10-13, 2000) p. 9-11.
3. V. Haerle, B. Hahn, H.J. Lugauer, G. Bruderl, D. Eisert, U. Strauss, A. Lell and N. Hiller, "Developments in InGaN-on-SiC LEDs and Lasers at Osram", Compound Semiconductor, Vol. 6, No. 8, pp. 81-87, November 2000.
4. J. Edmond, G. Bulman, H. S. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S. Sheppard, G. Negely, D.Slater, J. D. Brown, J. T. Swindell, T. Overocker, and J. F.Schetzina, Proc. of the 2nd Int. Conf. Nitride Semiconductors, 1997 (Tokushima, 1997), p. 448.
5. T. Mukai, M. Yamada, and S. Nakamura, "Current and temperature dependences of electroluminescence of InGaN-basedUV/blue/green light-emitting diodes" Jpn. J. Appl. Phys., vol. 37,p. L1358, 1998.
6. I. Eliashevich, "Improved Current Spreading in High-Power InGaN LEDs", Compound Semiconductor, Vol. 6, No. 3, pp.82-84, April 2000.