Differential gain and gain compression in quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 43, Issue 4, 2007, Pages 287-294

  Fiore, Andrea ^a   Markus, Alexander ^a  

^a EPFL   (Switzerland)

Author keywords

Differential gain; Gain compression; Quantum dots (qds); Semiconductor lasers

Indexed keywords

ANALYTICAL EXPRESSIONS; DIFFERENTIAL GAIN; DYNAMICAL RESPONSE; GAIN COMPRESSION; INTRA-DOT RELAXATION; QD LASERS; QUANTUM DOTS; QUANTUM DOTS (QDS); SPECTRAL-HOLE BURNING;

LASERS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 34548154050     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.890399     Document Type: Article

References (33)

1. R. Krebs et al., "High frequency characteristics of InAs /GaInAs quantum dot distributed feedback lasers operating at 1.3 μm," Electron. Lett., vol.37, no.20, pp. 1223-1225, 2001.
2. K. Otsubo et al., "Temperature-insensitive eye-opening under 1.0-Gb/s modulation of 1.3-mu m p-doped quantum-dot lasers without current adjustments," Jpn. J. Appl. Phys. Part 2, vol. 43, no. 8B, pp. L1124-L1126, 2004.
3. H. Su and L. F. Lester, "Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp," J. Phys. D-Appl. Phys., vol.38, no.13, pp. 2112-2118, 2005.
4. Z. Mi, P. Bhattacharya, and S. Fathpour, "High-speed 1.3 mu m tunnel, injection quantum-dot lasers," Appl. Phys. Lett., vol.86, no.15, pp. 153109-1531011, 2005.
5. M.. Kuntz et al., "10 Gbit/s data modulation using 1.3 mu m InGaAs quantum dot lasers," Electron. Lett., vol.41, no.5, pp. 244-245, 2005.
6. Z. Mi, J. Yang, and P. Bhattacharya, "Growth and characteristics of p-doped InAs tunnel injection quantum dash lasers on InP.," IEEE Photon. Technol. Lett., vol.18, no.12, pp. 1377-1379, 2006. (Pubitemid 43898948)
7. 0.6As/GaAs self-organized quantum dot lasers at room temperature," Appl. Phys. Lett., vol.81, no.16, pp. 3055-3057, 2002.
8. A. V. Uskov et al., "Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: quantum efficiency and nonlinear gain," Appl. Phys. Lett., vol.73, no.11, pp. 1499-1501,1998.
9. M. Ishida et al., "Photon lifetime dependence of modulation efficiency and K factor in 1.3 mu m self-assembled InAs/GaAs quantum-dot lasers: impact of capture time and maximum modal gain on modulation bandwidth," Appl. Phys. Lett., vol.85, no.18, pp. 4145-4147, 2004.
10. A. Markus and A. Fiore, "Modeling carrier dynamics in quantum-dot lasers," Phys. Stat. Sol. (a), vol.201, no.2, pp. 338-344, 2004.
11. D. G. Deppe, H. Huang, and O. B. Shchekin, "Modulation characteristics of quantum-dot lasers: the influence of P-type doping and the electronic density of states on obtaining high speed," IEEE J. Quantum Electron., vol.38, no.12, pp. 1587-1593, Dec. 2002.
12. D. G. Deppe et al., "Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum, dot lasers," J. Phys. D-Appl. Phys., vol.38, no.13, pp. 2119-2125, 2005.
13. W. W. Chow and S. W. Koch, "Theory of semiconductor quantum-dot laser dynamics," IEEE J. Quantum Electron., vol.41, no.4, pp. 495-505, Apr. 2005.
14. A. J. Williamson, L. W. Wang, and A. Zunger, "Theoretical interpretation of the experimental, electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots," Phys. Rev. B, vol.62, no.19, pp. 12963-12977, 2000.
15. A. Fiore et al, "High-efficiency light-emitting diodes at 1.3 μm using InAs-InGaAs quantum dots," IEEE Photon. Technol. Lett., Vol. 12, no.12, pp. 1601-1603, Dec. 2000.
16. A. Markus et al., "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett., vol.82, no.12, pp. 1818-1820, 2003.
17. R. Ferreira and G. Bastard, "Phononassisted capture and intradot auger relaxation in quantum dots," Appl. Phys. Lett., vol.74, no.19, pp. 2818-2820, 1999.
18. B. Ohnesorge et al, "Rapid carrier relaxation in self-assembled InGaAs/GaAs quantum, dots," Phys. Rev. B, vol.54, no.16, pp. 11532-11538, 1996.
19. T. S. Sosnowski et al., "Rapid carrier relaxation in InGaAs/GaAs quantum dots characterized by differential transmission spectroscopy," Phys. Rev. B, vol.57, no.16, pp. R9423-R9426, 1998.
20. S. Sauvage et al., "Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots," Appl. Phys. Lett., vol.73, no.26, pp. 3818-3820, 1998.
21. P. Borri et al, "Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-mu m-wavelength at room, temperature," Appl. Phys. Lett., vol.79, no.16, pp. 2633-2635, 2001. (Pubitemid 33599659)
22. K. Gundogdu et al., "Ultrafast electron capture into p-modulation-doped quantum dots," Appl. Phys. Lett., vol.85, no.20, pp. 4570-4572, 2004. (Pubitemid 40009625)
23. J. Siegert, S. Marcinkevicius, and Q. X. Zhao, "Carrier dynamics in modulation-doped InAs/GaAs quantum dots," Phys. Rev. B, vol.72, no.8, p. 085316, 2005.
24. K. W. Sun et al., "Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots," Appl. Phys. Lett., vol.88, no.16, pp. 163117-163119,2006.
25. H. Benisty, C. M. Sotomayortorres, and C. Weisbuch, "Intrinsic mechanism for the poor luminescence properties of quantum-box systems," Phys. Rev. B, vol.44, no.19, pp. 10945-10948, 1991.
26. T. Muller et al., "Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum, dots," Appl. Phys. Lett., vol.83, no.17, pp. 3572-3574, 2003.
27. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, K. Chang, Ed. New York: Wiley, 1995.
28. P. Blood, "On the dimensionality of optical, absorption, gain, and recombination in quantum-confined structures," IEEE J. Quantum Electron., vol.36, no.3, pp. 354-362, Mar. 2000.
29. A. Markus et al., "Role of thermal hopping and homogeneous broadening on the spectral characteristics of quantum dot lasers," J. Appl. Phys., vol.98, no.10, p. 104506, 2005.
30. M. Kuntz et al., "Spectrotemporal response of 1.3 mu m quantum-dot lasers," Appl. Phys. Lett., vol.8.1, no.20, pp. 3846-3848, 2002. (Pubitemid 35445530)
31. M. Sugawara et al., "Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gbs( -1) directly modulated lasers and 40 Gbs( -1) signal-regenerative amplifiers," J. Phys. D-Appl. Phys., vol.38, no.13, pp. 2126-2134, 2005.
32. S. Fathpour, Z. Mi, and P. Bhattacharya, "Small-signal modulation characteristics of p-doped 1.1 and 1.3 mm. quantum dot lasers," IEEE Photon. Technol. Lett., vol.17, no.11, pp. 2250-2252, Nov. 2005.
33. M. Grundmann, "How a quantum-dot laser turns on," Appl. Phys. Lett., vol.77, no.10, pp. 1428-1430, 2000.