Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots

Applied Physics Letters

Volumn 73, Issue 26, 1998, Pages 3818-3821

  Sauvage, S ^a   Boucaud, P ^a   Glotin, F ^b   Prazeres, R ^b   Ortega, J M ^b   Lemaitre, A ^c   Gerard J M ^c   Thierry Flieg, V ^c  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RELAXATION; ELECTRIC EXCITATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ENERGY ABSORPTION; FREE ELECTRON LASERS; PHONONS; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ELECTRON RELAXATION; INTRABAND ABSORPTION; PHONO BOTTLENECK;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032576507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122904     Document Type: Article

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