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Journal of Applied Physics

Volumn 102, Issue 3, 2007, Pages

Theory of superfast fronts of impact ionization in semiconductor structures

(4) Rodin, Pavel a Ebert, Ute b Minarsky, Andrey c Grekhov, Igor a

a IOFFE INSTITUTE (Russian Federation)

b CWI (Netherlands)

c RUSSIAN ACADEMY OF SCIENCES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION;

DRIFT VELOCITY; IMPACT IONIZATION COEFFICIENTS; SUPERFAST FRONTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 34548010795 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2767378 Document Type: Article

Times cited : (22)

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