메뉴 건너뛰기




Volumn 46, Issue 5 A, 2007, Pages 2858-2864

Study of nano-scale electrical properties of hydrogenated microcrystalline silicon solar cells by conductive atomic force microscope

Author keywords

C Si:H solar cell; Conductive AFM; Local reverse (leakage) current; Nano scale I V characteristics; Surface topography

Indexed keywords

AGGLOMERATION; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; SOLAR CELLS; SURFACE TOPOGRAPHY; X RAY DIFFRACTION;

EID: 34547909629     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2858     Document Type: Article
Times cited : (16)

References (20)
  • 10
    • 0034188031 scopus 로고    scopus 로고
    • The contact diameter between a rhodium layer and a p-layer of μc-Si:H surface was estimated to be at ∼0.5 nm using the Hertz equation in A. Bietsch, M. A. Schneider, and M. Bruno: J. Vac. Sci. Technol. B 18 (2000) 1160.
    • The contact diameter between a rhodium layer and a p-layer of μc-Si:H surface was estimated to be at ∼0.5 nm using the Hertz equation in A. Bietsch, M. A. Schneider, and M. Bruno: J. Vac. Sci. Technol. B 18 (2000) 1160.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.