Resonant photothermal bending spectroscopy at variable temperature 25-150 °c and its application to hydrogenated microcrystalline silicon films

Review of Scientific Instruments

Volumn 74, Issue 1 II, 2003, Pages 881-883

  Kunii, T ^a   Mori, K ^a   Kiriyama, T ^a   Kitao, J ^a   Yoshida, N ^a   Nonomura, S ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BENDING (DEFORMATION); CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; HYDROGENATION; LIGHT ABSORPTION; SEMICONDUCTING SILICON; THERMAL EFFECTS;

RESONANT PHOTOTHERMAL BENDING SPECTROSCOPY (RPBS);

THIN FILMS;

EID: 0037280797     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517152     Document Type: Conference Paper

References (5)

1. T. Kunii, J. Kitao, K. Mori, N. Yoshida, and S. Nonomura, Sol. Energy Mater. Sol. Cells 74, 415 (2002).
2. J. Kitao, Y. Kasuya, T. Kunii, N. Yoshida, and S. Nonomura, Anal. Sci. 17, 302 (2001).
3. N. M. Amer and W. B. Jackson, Semiconductors and Semimetals (Academic, New York, 1984), Vol. 21B, p. 88.
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
5. G. Lucovsky, Solid State Commun. 3, 299 (1965).