Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 587-593

  Rezek, B ^a   Stuchlik J ^a   Fejfar, A ^a   Kocka J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AMORPHOUS SILICON (A-SI:H); ATOMIC FORCE MICROSCOPE (AFM); CONDUCTIVE GRAINS; CRYSTALLINE FRACTIONS; DEVICE QUALITY; ELECTRICAL CURRENT; HYDROGENATED MICROCRYSTALLINE SILICON; IN-SITU; LASER ANNEALING; LATERAL RESOLUTION; LAYER THICKNESS; MICROCRYSTALLINE SILICON THIN FILMS; SIMULTANEOUS MEASUREMENT; VARIOUS SUBSTRATES;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

MICROCRYSTALLINE SILICON;

EID: 0036639047     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486032     Document Type: Article

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