Passivation and etching of fine-grained polycrystalline silicon films by hydrogen treatment

Solar Energy Materials and Solar Cells

Volumn 90, Issue 14, 2006, Pages 2087-2098

  Slaoui, A ^a   Pihan, E ^a   Ka, I ^a   Mbow, N A ^a   Roques, S ^a   Koebel, J M ^a  

^a Faculté de Médecine   (France)

Author keywords

Hydrogenation; Plasma; Polycrystalline silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; ETCHING; GRAIN GROWTH; HEAT TREATMENT; HYDROGEN; HYDROGENATION; PASSIVATION; PLASMAS; SILICON NITRIDE; TEMPERATURE DISTRIBUTION;

DEFECTS PASSIVATION; HYDROGEN PLASMA; SURFACE ETCHING;

POLYSILICON;

EID: 33744985794     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.02.004     Document Type: Article

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