Modeling of radial uniformity at a wafer interface in a 2f-CCP for Si O2 etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2212-2217

  Yagisawa, T ^a   Shimada, T ^a   Makabe, T ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ETCHING; PLASMAS; SILICA;

ION ENERGY; ION INJECTION; RADIAL UNIFORMITY;

SILICON WAFERS;

EID: 31144476035     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2040447     Document Type: Conference Paper

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