Organic Materials for High-Density Non-Volatile Memory Applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 259-262

  Sezi, R ^a   Walter, A ^a   Engl, R ^a   Maltenberger, A ^a   Schumann, J ^a   Kund, M ^b   Dehm, C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b NONE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; COMPLEXATION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; MOLECULAR STRUCTURE; SPIN COATING; SWITCHING; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

CHARGE TRANSFER COMPLEXES; DATA RETENTION;

NONVOLATILE STORAGE;

EID: 0842288268     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A. Bandyopadhyay and A. J. Pal, "Large conductance switching and memory effects in organic molecules for data-storage applications", Appl. Phys. Lett. Vol. 82(8), pp. 1215-1217, February 2003.
2. L. P. Ma, J. Liu and Y. Yang, "Organic electrical bistable devices and rewritable memory cells", Appl. Phys. Lett. Vol. 80(16), pp. 2997-2999, April 2002.
3. J. H. Krieger, S. V. Trubin, S. B. Vaschenko and N. F Yudanov, "Molecular analogue memory cell based on electrical switching and memory in molecular thin films", Synth. Met. Vol. 122, pp. 199-202, 2001.