Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface

e-Journal of Surface Science and Nanotechnology

Volumn 4, Issue , 2006, Pages 280-284

  Yamashita, Y ^a   Yamamoto, S ^a,c   Mukai, K ^a   Yoshinobu, J ^a   Harada, Y ^b   Tokushima, T ^b   Takeuchi, T ^b   Takata, Y ^b   Shin, S ^a,b   Akagi, K ^a   Tsuneyuki, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN SPring 8 Center   (Japan)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Density functional calculations; Interface; Semiconductor insulator interfaces; Silicon; Silicon oxides; X ray emission

Indexed keywords

ATOMS; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); SILICA; SILICON; X RAY SPECTROSCOPY;

DENSITY FUNCTIONAL CALCULATIONS; DEVICES; SEMICONDUCTOR-INSULATOR INTERFACES; VALENCE ELECTRON; X-RAY EMISSION;

ELECTRONIC STRUCTURE;

EID: 33645235138     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2006.280     Document Type: Article

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