Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study

Journal De Physique. IV : JP

Volumn 132, Issue , 2006, Pages 259-262

  Yamashita, Y ^a   Yamamoto, S ^a   Mukai, K ^a   Yoshinobu, J ^a   Harada, Y ^b   Tokushima, T ^b   Takata, Y ^b   Shin, S ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN SPring 8 Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; OXIDATION; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS; X RAY ANALYSIS;

AMORPHOUS-LIKE ELECTRONIC STATES; SEMICONDUCTOR INTERFACES; X-RAY ABSORPTION;

INTERFACES (MATERIALS);

EID: 33744900866     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2006132049     Document Type: Conference Paper

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