Relationship between interfacial roughness and dielectric reliability for silicon oxynitride gate dielectrics processed with nitric oxide

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 289-294

  Sapjeta, J ^a   Green, M L ^a   Chang, J P ^a   Silverman, P J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DIELECTRIC FILMS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; INTERFACES (MATERIALS); NITRIDING; OXIDATION; SURFACE ROUGHNESS;

CHANNEL MOBILITY; DIELECTRIC RELIABILITY; INTERFACE ROUGHNESS; NITRIC OXIDE; OXYNITRIDATION;

GATES (TRANSISTOR);

EID: 0033357663     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-289     Document Type: Conference Paper

References (8)

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