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Volumn 70, Issue 1, 2001, Pages 78-83

Silicon dioxide passivation of gallium arsenide by liquid phase deposition

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; LEAKAGE CURRENTS; PASSIVATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034836118     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00463-6     Document Type: Article
Times cited : (27)

References (24)
  • 2
    • 0020475756 scopus 로고
    • Plasma-enhanced chemically vapour-deposited silicon dioxide for metal/oxide/semiconductor structures on InSb
    • U. Mackens, U. Merkt, Plasma-enhanced chemically vapour-deposited silicon dioxide for metal/oxide/semiconductor structures on InSb, Thin Solid Films 97 (1982) 53-61.
    • (1982) Thin Solid Films , vol.97 , pp. 53-61
    • Mackens, U.1    Merkt, U.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.