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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 37-41, 2006, Pages

Effects of Ar/N2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors

(6) Zan, Hsiao Wen a Yen, Kuo Hsi a Liu, Pu Kuan a Ku, Kuo Hsin b Chen, Chien Hsun b Hwang, Jennchang b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

AIN; Dielectric; Low temperature; Organic; OTFT; Pentacene; Sputtering

Indexed keywords

ELECTRIC CURRENTS; LOW TEMPERATURE EFFECTS; SPUTTERING; THIN FILM DEVICES;

NITROGEN GAS RATIO; PENTACENE; POOLE-FRENKEL-TYPE LEAKAGE;

METALLIC FILMS;

EID: 34547842680 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L1093 Document Type: Article

Times cited : (6)

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