A novel program-erasable high-κ AlN capacitor with memory function

Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Volumn , Issue , 2004, Pages 18-23

  Chin, Albert ^a,b   Lai, C H ^b   Hung, B F ^b   Cheng, C F ^b   McAlister, Scan P ^c   Zhu, Chunxiang ^a   Li, Ming Fu ^a   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d The University of Texas at Austin   (United States)

Author keywords

Aln; Erase; High dielectric constant (high ); Memory; Program; Retention

Indexed keywords

ERASE; HIGH DIELECTRIC CONSTANT (HIGH K); RETENTION; SYSTEM-ON-CHIP (SOC);

ALUMINUM NITRIDE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; FLASH MEMORY; NONVOLATILE STORAGE; PERMITTIVITY;

CAPACITORS;

EID: 18844387614     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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