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Volumn , Issue , 2003, Pages 605-608
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Integration of Fluorinated Nano-Crystal Memory Cells with 4.6F2 Size by Landing Plug Polysilicon Contact and Direct-Tungsten Bitline
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Author keywords
[No Author keywords available]
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Indexed keywords
CONTROLLABILITY;
DATA STORAGE EQUIPMENT;
DIELECTRIC MATERIALS;
ELECTRON TUNNELING;
HOT CARRIERS;
POLYSILICON;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR GROWTH;
SILANES;
SILICA;
SURFACE ROUGHNESS;
THICKNESS MEASUREMENT;
NANO-CRYSTAL MEMORY (NCM) CELLS;
SELF-ALIGNED CONTACT (SAC);
NANOSTRUCTURED MATERIALS;
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EID: 0842288217
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (6)
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