Effects of Si film thickness and substrate temperature on melt duration observed in excimer laser-induced crystallization of amorphous Si thin films using in-situ transient reflectivity measurements

Thin Solid Films

Volumn 515, Issue 20-21, 2007, Pages 8094-8100

  Kuo, Chil Chyuan ^a,b   Yeh, Wen Chang ^a   Lee, Ji Feng ^a   Jeng, Jeng Ywan ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Excimer laser induced crystallization; In situ transient reflectivity; Melt duration; Si film thickness; Substrate temperature

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; FILM THICKNESS; RAMAN SCATTERING; SILICON; THERMAL EFFECTS; TRANSIENT ANALYSIS;

IN SITU TRANSIENT REFLECTIVITY MEASUREMENTS; MELT DURATION; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 34547652822     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.124     Document Type: Article

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