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Volumn 505-507, Issue PART 1, 2006, Pages 337-342

Nanosecond time resolution in-situ optical reflection and transmission measurements during XeF excimer laser interaction with amorphous silicon thin films

Author keywords

Crystallization mechanism; Excimer laser crystallization; Explosive crystallization; In situ optical reflection and transmission measurement

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; SILICA; SURFACE ROUGHNESS; THIN FILMS;

EID: 33750829785     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-990-3.337     Document Type: Conference Paper
Times cited : (10)

References (19)
  • 2
    • 36449004108 scopus 로고
    • Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
    • J. S. Im, H. J. Kim, and M. O. Thompson," Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films", Appl. Phys. Lett. 63, 1969 (1993).
    • (1993) Appl. Phys. Lett , vol.63 , pp. 1969
    • Im, J.S.1    Kim, H.J.2    Thompson, M.O.3
  • 12
    • 0028409580 scopus 로고
    • On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films
    • J.S. Im, H.J. Kim," On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films", Appl. Phys. Lett. 64, 2303 (1994).
    • (1994) Appl. Phys. Lett , vol.64 , pp. 2303
    • Im, J.S.1    Kim, H.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.