On the interpretation of time-resolved surface reflectivity measurements during the laser annealing of Si thin films

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 2, 1998, Pages 643-650

  Boneberg, J ^a   Leiderer, P ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GLASS; INTERFACES (MATERIALS); LIGHT MEASUREMENT; LIGHT REFLECTION; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SOLIDIFICATION; SURFACE PROPERTIES; THIN FILMS;

PULSED LASER ANNEALING; SURFACE REFLECTIVITY MEASUREMENTS;

SEMICONDUCTING FILMS;

EID: 0032045807     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:2<643::AID-PSSA643>3.0.CO;2-L     Document Type: Article

References (13)

1. J. NARAYAN and C.W. WHITE, Appl. Phys. Lett. 44, 35 (1984).
2. P. S. PEERCY, J. M. POATE, M. O. THOMPSON, and J. Y. TSAO, Appl. Phys. Lett. 48, 1651 (1986).
3. P. S. PEERCY, J. Y. TSAO, S. R. STIFFLER, and M. O. THOMPSON, Appl. Phys. Lett. 52, 203 (1988).
4. T. SAMESHIMA, Jpn. J. Appl. Phys. 32, L1485 (1993).
5. J. S. IM and H. J. KIM, Appl. Phys. Lett. 64, 2303 (1994).
6. M. HEINTZE, P. V. SANTOS, C. E. NEBEL, and M. STUTZMANN, Appl. Phys. Lett. 64, 3184 (1994).
7. R. ISHIHARA and M. MATSUMURA, Jpn. J. Appl. Phys. 34, 3976, (1995).
8. G. E. JELLISON, JR. and H. H. BURKE, J. Appl. Phys. 60, 841 (1986).
9. J. BONEBERG, J. NEDELCU, H. BENDER, and P. LEIDERER, Mater. Sci. Engng. A 173, 347 (1993).
10. G. E. JELLISON, JR., D. H. LOWNDES, D. N. MASHBURN, and R. F. WOOD, Phys. Rev. B 34, 2407 (1986).
11. S. R. STIFFLER, M. O. THOMPSON, and P. S. PEERCY, Phys. Rev. B 43, 9851 (1991).
12. S. R. STIFFLER, M. O. THOMPSON, and P. S. PEERCY, Phys. Rev. Lett. 60, 2519 (1988).
13. S. R. STIFFLER, Dissertation, Cornell University, 1988.