Location control of Si thin-film grain using Ni imprint and excimer laser annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4335-4339

  Nakagawa, Gou ^a   Asano, Tanemasa ^a   Miyasaka, Mitsutoshi ^b  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Disk like grain; Excimer laser annealing; Location control; Metal induced crystallization; Ni imprint; Poly Si; TFT; Thin film transistor

Indexed keywords

ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; POLYSILICON; SILICON;

DISK LIKE GRAIN; EXCIMER LASER ANNEALING; LOCATION CONTROL; METAL INDUCED CRYSTALLIZATION; NI IMPRINT; TFT;

THIN FILM TRANSISTORS;

EID: 33744482315     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4335     Document Type: Article

References (9)

1. C. H. Oh, M. Ozawa and M. Matsumura: Jpn. J. Appl. Phys. 37 (1998) L492.
2. R. Ishihara, P. C. van der Wilt, B. D. van Dijk, A. Burtsev, J. W. Metselaar and C. I. M. Beenakker: Dig. Tech. Pap., 2002 AM-LCD, p. 53.
3. H. Kumomi: Appl. Phys. Lett. 83 (2003) 434.
4. H. Kumomi, C. Shin, G. Nakagawa and T. Asano: IEDM Tech. Dig., 2004, 32.2.1.
5. K. Makihira and T. Asano: Appl. Phys. Lett. 76 (2000) 3774.
6. K. Makihira and T. Asano: Dig. Tech. Pap., 2000 AM-LCD, p. 33.
7. K. Makihira, M. Yoshii and T. Asano: Jpn. J. Appl. Phys. 42 (2003) 1983.
8. J. Jang: Solid State Phenom. 93 (2003) 199.
9. N. Matsuo, H. Abe, N. Kawamoto, R. Taguchi, T. Nouda, H. Hamada and T. Miyoshi: Shinku 43 (2000) 1120 [in Japanese].