Influence of the beam irradiation conditions on an Si film melting-crystallized by a Nd:YAG pulse laser beam with linear polarization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2630-2635

  Nakata, Yasunori ^a   Kaki, Hirokazu ^a   Horita, Susumu ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Grain boundary; Linear polarization; Melting crystallization; Nd:YAG pulse laser; Periodic temperature distribution; Polycrystalline silicon; Pulse laser annealing; Thin film transistor

Indexed keywords

ANNEALING; CRYSTALLIZATION; GRAIN BOUNDARIES; LASER PULSES; LIGHT POLARIZATION; MELTING; NEODYMIUM LASERS; THIN FILM TRANSISTORS;

LINEAR POLARIZATION; MELTING-CRYSTALLIZATION; ND:YAG PULSE LASERS; PERIODIC TEMPERATURE DISTRIBUTION; PULSE LASER ANNEALING;

POLYSILICON;

EID: 3142661173     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2630     Document Type: Article

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