Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Jones, G M ^a   Hu, B H ^a   Yang, C H ^a   Yang, M J ^b   Hajdaj, Russel ^c   Hehein, Gerard ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYER GATED CONFIGURATION; NUCLEAR SPIN; QUANTUM COMPUTING; SINGLE ELECTRON TRANSISTOR (SET);

ELECTRIC CHARGE; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; ISOTOPES; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

MOS DEVICES;

EID: 33747490394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337273     Document Type: Article

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