Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Klein, L J ^a   Lewis, K L M ^a   Slinker, K A ^a   Goswami, Srijit ^a   Van Der Weide, D W ^a   Blick, R H ^a   Mooney, P M ^a,b   Chu, J O ^a,b   Coppersmith, S N ^a   Friesen, Mark ^a   Eriksson, M A ^a  

^a University of Wisconsin Madison   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION WIDTH; ETCHED WIRES; FERMI-LEVEL PINNING; MODULATION-DOPING;

ELECTRIC CONDUCTANCE; ELECTRON GAS; HETEROJUNCTIONS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31644449159     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159074     Document Type: Article

References (29)

1. S. J. Koester, Electron. Lett. 39, 1684 (2003).
2. D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
3. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 62, 012306 (2000).
4. M. Friesen, P. Rugheimer, D. E. Savage, M. G. Lagally, D. W. van der Weide, R. Joynt, and M. A. Eriksson, Phys. Rev. B 67, 121301 (R) (2003).
5. M. Friesen, C. Tahan, R. Joynt, and M. A. Eriksson, Phys. Rev. Lett. 92, 037901 (2004).
6. B. E. Kane, Nature (London) 393, 133 (1998).
7. E. Yablonovitch, H. W. Jiang, H. Kosaka, H. D. Robinson, D. S. Rao, and T. Szkopek, Proc. IEEE 91, 761 (2003).
8. M. A. Eriksson, Quantum Inf. Process. 3, 133 (2004).
9. F. Schäffler, D. Többen, H.-J. Herzog, G. Abstreiter, and B. Holländer, Semicond. Sci. Technol. 7, 260 (1992).
10. K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu, and B. S. Meyerson, Appl. Phys. Lett. 66, 1077 (1995).
11. N. Sugii, K. Nakagawa, Y. Kimura, S. Yamaguchi, and M. Miyao, Semicond. Sci. Technol. 13, A140 (1998).
12. T. Okamoto, M. Ooya, K. Hosoya, and S. Kawaji, Phys. Rev. B 69, 041202 (R) (2004).
13. K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Muhlberger, and F. Schäffler, Phys. Rev. Lett. 93, 156805 (2004).
14. S. Kanjanachuchai, T. J. Thornton, J. M. Fernndez, and H. Ahmed, Semicond. Sci. Technol. 13, 1215 (1998).
15. A. Notargiacomo, L. Di Gaspare, G. Scappucci, G. Mariottini, F. Evangelisti, E. Giovine, and R. Leoni, Appl. Phys. Lett. 83, 302 (2003).
16. L. J. Klein, Appl. Phys. Lett. 84, 4047 (2004).
17. Y. Zhang, G. S. Oehrlein, E. de Frsart, and J. W. Corbett, J. Vac. Sci. Technol. A 11, 2492 (1993).
18. M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, and F. Schäffler, Appl. Phys. Lett. 66, 833 (1995).
19. R. G. van Veen, A. H. Verbruggen, E. van. der. Drift, F. Schäffler, and S. Radelaar, Semicond. Sci. Technol. 14, 508 (1999).
20. E. Giovine, Nanotechnology 12, 132 (2001).
21. Y. Takahashi, A. Fujiwara, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, and K. Murase, Int. J. Electron. 86, 605 (1999).
22. L. P. Kouwenhoven, C. M. Marcus, P. L. McEuen, S. Tarucha, R. M. Westervelt, and N. S. Wingreen, in Mesoscopic Electron Transport, edited by, L. L. Sohn, L. P. Kouwenhoven, and, G. Schön, (Kluwer, Dordrecht, 1997), p. 105.
23. M. H. Devoret and H. Grabert, in Single Charge Tunneling, 2nd ed., edited by, H. Grabert, and, M. H. Devoret, (Wiley, New York, 1992), p. 1.
24. R. Ahuja, C. Persson, A. F. da Silva, J. S. de Almeida, C. M. Araujo, and B. Johansson, J. Appl. Phys. 93, 3832 (2003).
25. J. D. Jackson, in Classical Electrodynamics, 2nd ed. (Wiley, New York, 1975).
26. We use the commercial finite element software FEMLAB (www.comsol.com).
27. S. M. Sze, in Physics of Semiconducting Devices, 2nd ed. (Wiley, New York, 1981).
28. C. W. J. Beenakker and H. van Houten, Solid State Phys. 44, 1 (1991), and reference therein.
29. M. M. Fogler, Phys. Rev. B 69, 245321 (2004).